Guanidinium thiocyanate selective Ostwald ripening induced large grain for high performance perovskite solar cells
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Altres documents de l'autoria: Duy Pham, Ngoc; Tiing Tiong, Vincent; Yao, Disheng; Martens, Wayde; Guerrero, Antonio; Bisquert, Juan; Wang, Hongxia
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Títol
Guanidinium thiocyanate selective Ostwald ripening induced large grain for high performance perovskite solar cellsAutoria
Data de publicació
2017Editor
ElsevierISSN
2211-2855Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
https://www.sciencedirect.com/science/article/pii/S2211285517306146Versió
info:eu-repo/semantics/submittedVersionParaules clau / Matèries
Resum
Organic-inorganic lead halide perovskite has become one of the most attractive materials for future low-cost
high-efficiency solar technology. However, the polycrystalline nature of perovskite thin-film often possesses ... [+]
Organic-inorganic lead halide perovskite has become one of the most attractive materials for future low-cost
high-efficiency solar technology. However, the polycrystalline nature of perovskite thin-film often possesses an
exceptional density of defects, especially at grain boundaries (GBs) and film surface, limiting further improvement
in the power conversion efficiency (PCE) of the perovskite device. Here, we report a simple method to
reduce GBs and to passivate the surface of a methylammonium lead tri-iodide (MAPbI3) film by guanidinium
thiocyanate (GUTS)-assisted Ostwald ripening post treatment. High-optoelectronic quality MAPbI3 film consisting
of micron-sized grains were synthesized by post-treating a MAPbI3 film with GUTS/isopropanol solution
(4 mg/mL, GUTS-4). Analysis of the electrochemical impedance spectra (EIS) of the solar cells showed that
interfacial charge recombination resistance of the device based on a GUTS-4 post-treated MAPbI3 absorber film
was increased by a factor of 1.15–2.6, depending on light illumination intensity, compared to the control MAPbI3
cell. This is consistent with results of the open-circuit voltage (Voc) decay and the light intensity dependent
photovoltage evolution which shows device with GUTS treatment had one order longer charge carrier lifetime
and was more ideal (ideality factor = 1.25). Further characterization by Kelvin probe force microscope indicated
that GUTS-4 treatment shifted the energetics of the MAPbI3 film by ~ 100 meV towards better energy
level alignment with adjacent SnO2 electron transport layer, leading to a more favorable charge extraction
process at the MAPbI3/SnO2 interface. As a result, the PCE of PSCs was enhanced from 14.59% to 16.37% and
the hysteresis effect was mitigated. [-]
Publicat a
Nano Energy Volume 41, November 2017Proyecto de investigación
FT120100674 ; MAT2013-47192-C3-1-R ; ACOMP/2015/105 ; RYC-2014-16809Drets d'accés
http://rightsstatements.org/vocab/CNE/1.0/
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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