Co3O4 based all-oxide PV: a numerical simulation analyzed combinatorial material science study
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http://dx.doi.org/10.1021/acs.jpcc.6b01164 |
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Títol
Co3O4 based all-oxide PV: a numerical simulation analyzed combinatorial material science studyAutoria
Data de publicació
2016Editor
American Chemical SocietyISSN
1932-7447Cita bibliogràfica
MAJHI, Koushik, et al. Co3O4 Based All-Oxide PV: A Numerical Simulation Analyzed Combinatorial Material Science Study. The Journal of Physical Chemistry C, 2016, 120 (17), pp 9053–9060Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b01164Versió
info:eu-repo/semantics/publishedVersionParaules clau / Matèries
Resum
Here we investigate the impact of four different metal back contacts on the photovoltaic (PV) performance of Co3O4 thin film all-oxide photovoltaic cells. A combinatorial TiO2|Co3O4 heterojunction thin film device ... [+]
Here we investigate the impact of four different metal back contacts on the photovoltaic (PV) performance of Co3O4 thin film all-oxide photovoltaic cells. A combinatorial TiO2|Co3O4 heterojunction thin film device library was made with thickness gradients for both metal oxide layers. Grids of four different metal back contacts were then deposited on top of these layers. A significant effect of the metal back contacts on the final photoconversion performance has been observed by combinatorial PV measurements. We analyze these results via advanced numerical simulations and different scenarios in order to explain the recombination mechanisms at the different back contacts. We conclude that the nature of the back contact material controls the density of surface states and, therefore, the undesirable surface recombination at the absorber–back contact interface. [-]
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