Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressure
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Otros documentos de la autoría: Escribano López, Purificación; Carda Castelló, Juan Bautista; De Oliveira, Larissa Helena; Todorov, Teodor Krassimirov
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INVESTIGACIONMetadatos
Título
Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressureAutoría
Fecha de publicación
2008Editor
Wiley-BlackwellISSN
1610-1634Cita bibliográfica
TODOROV, Teodor, et al. Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressure. physica status solidi c, 2008, vol. 5, no 11, p. 3437-3440.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200779441Resumen
Spin‐coating technique was used to deposit precursor layers for chalcopyrite films of the series CuInX2 and Cu(In,Ga)X2 where X = S or Se or (S,Se). The influence of different parameters of the process, such as solution ... [+]
Spin‐coating technique was used to deposit precursor layers for chalcopyrite films of the series CuInX2 and Cu(In,Ga)X2 where X = S or Se or (S,Se). The influence of different parameters of the process, such as solution composition, air pre‐treatment and chalcogenation treatment is discussed with respect to film applicability in photovoltaic devices. Layer morphology, stochiometry and crystalline structure varied widely with the different compositions and treatments. Highly oriented CuInSe2 and Cu(In,Ga)Se2 films were obtained. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) [-]
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Physica status solidi. C; vol. 5, núm. 11Derechos de acceso
http://rightsstatements.org/vocab/CNE/1.0/
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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