Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressure
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Altres documents de l'autoria: Escribano López, Purificación; Carda Castelló, Juan Bautista; De Oliveira, Larissa Helena; Todorov, Teodor Krassimirov
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7053
comunitat-uji-handle3:10234/8639
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Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressureAutoria
Data de publicació
2008Editor
Wiley-BlackwellISSN
1610-1634Cita bibliogràfica
TODOROV, Teodor, et al. Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressure. physica status solidi c, 2008, vol. 5, no 11, p. 3437-3440.Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200779441Resum
Spin‐coating technique was used to deposit precursor layers for chalcopyrite films of the series CuInX2 and Cu(In,Ga)X2 where X = S or Se or (S,Se). The influence of different parameters of the process, such as solution ... [+]
Spin‐coating technique was used to deposit precursor layers for chalcopyrite films of the series CuInX2 and Cu(In,Ga)X2 where X = S or Se or (S,Se). The influence of different parameters of the process, such as solution composition, air pre‐treatment and chalcogenation treatment is discussed with respect to film applicability in photovoltaic devices. Layer morphology, stochiometry and crystalline structure varied widely with the different compositions and treatments. Highly oriented CuInSe2 and Cu(In,Ga)Se2 films were obtained. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) [-]
Publicat a
Physica status solidi. C; vol. 5, núm. 11Drets d'accés
http://rightsstatements.org/vocab/CNE/1.0/
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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