Physical electrochemistry of nanostructured devices
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Physical electrochemistry of nanostructured devicesAutoria
Data de publicació
2008Editor
Royal Society of ChemistryISSN
14639076Tipus de document
info:eu-repo/semantics/articleVersió
info:eu-repo/semantics/acceptedVersionParaules clau / Matèries
Resum
This Perspective reviews recent developments in experimental techniques and conceptual methods
applied to the electrochemical properties of metal-oxide semiconductor nanostructures and
organic conductors, such as ... [+]
This Perspective reviews recent developments in experimental techniques and conceptual methods
applied to the electrochemical properties of metal-oxide semiconductor nanostructures and
organic conductors, such as those used in dye-sensitized solar cells, high-energy batteries, sensors,
and electrochromic devices. The aim is to provide a broad view of the interpretation of
electrochemical and optoelectrical measurements for semiconductor nanostructures (sintered
colloidal particles, nanorods, arrays of quantum dots, etc.) deposited or grown on a conducting
substrate. The Fermi level displacement by potentiostatic control causes a broad change of
physical properties such as the hopping conductivity, that can be investigated over a very large
variation of electron density. In contrast to traditional electrochemistry, we emphasize that in
nanostructured devices we must deal with systems that depart heavily from the ideal,
Maxwell–Boltzmann statistics, due to broad distributions of states (energy disorder) and
interactions of charge carriers, therefore the electrochemical analysis must be aided by
thermodynamics and statistical mechanics. We discuss in detail the most characteristic densities of
states, the chemical capacitance, and the transport properties, specially the chemical diffusion
coefficient, mobility, and generalized Einstein relation [-]
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