Field-enhanced bulk conductivity and resistive-switching in Ca-doped BiFeO3 ceramics
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Títol
Field-enhanced bulk conductivity and resistive-switching in Ca-doped BiFeO3 ceramicsData de publicació
2014Editor
Royal Society of ChemistryISSN
1463-9076; 1463-9084Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://pubs.rsc.org/en/content/articlepdf/2014/cp/c4cp02580fResum
The bulk conductivity at room temperature of Ca-doped BiFeO3 ceramics is p-type and increases
reversibly by up to 3 orders of magnitude under the influence of a small dc bias voltage in the range
B3 to 20 V mm1
. ... [+]
The bulk conductivity at room temperature of Ca-doped BiFeO3 ceramics is p-type and increases
reversibly by up to 3 orders of magnitude under the influence of a small dc bias voltage in the range
B3 to 20 V mm1
. The effect occurs in both grain and grain boundary regions, is isotropic and does not
involve creation of filamentary conduction pathways. It is proposed that, by means of capacitive
charging and internal ionisation processes under the action of a dc bias, hole creation leads to a more
conductive excited state. This gradually returns to the ground state when the dc bias is removed and the
holes recombine with electrons trapped at the sample surface. The holes are believed to be created on
oxygen, as O ions. [-]
Publicat a
Phys. Chem. Chem. Phys., 2014,16, 19408-19416Drets d'accés
This journal is © the Owner Societies 2014
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info:eu-repo/semantics/openAccess
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info:eu-repo/semantics/openAccess
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