Dielectric control of spin in semiconductor spherical quantum dots
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Altres documents de l'autoria: Royo Valls, Miguel; Rajadell Viciano, Fernando; Planelles, Josep
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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Dielectric control of spin in semiconductor spherical quantum dotsData de publicació
2008Editor
American Institute of PhysicsISSN
00218979Tipus de document
info:eu-repo/semantics/articleVersió
info:eu-repo/semantics/publishedVersionParaules clau / Matèries
Resum
The ground state electronic configuration of semiconductor spherical quantum dots populated with
different numbers of excess electrons, for different radii and dielectric constants of the embedding
medium is calculated ... [+]
The ground state electronic configuration of semiconductor spherical quantum dots populated with
different numbers of excess electrons, for different radii and dielectric constants of the embedding
medium is calculated and the corresponding phase diagram drawn. To this end, an extension of the
spin density functional theory to study systems with variable effective mass and dielectric constant
is employed. Our results show that high/low spin configurations can be switched by appropriate
changes in the quantum dot embedding environment and suggest the use of the quantum dot spin as
a sensor of the dielectric response of media [-]
Drets d'accés
Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in PLANELLES FUSTER, Josep. Dielectric control of spin in semiconductor spherical quantum dots, 2008, núm. 104, p. 14313, and may be found at http://adsabs.harvard.edu/abs/2008JAP...104a4313P
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