Strain behavior of lanthanum modified BiFeO3 thin films prepoared via soft chemical method
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comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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Title
Strain behavior of lanthanum modified BiFeO3 thin films prepoared via soft chemical methodAuthor (s)
Date
2008Publisher
American Institute of PhysicsISSN
00218979Type
info:eu-repo/semantics/articleVersion
info:eu-repo/semantics/publishedVersionAbstract
Pure and lanthanum modified BFO LaxBi1−xFeO3, x=0.0, 0.08, 0.15, 0.30 thin films were
fabricated on Pt 111 /Ti/SiO2 / Si substrates by the soft chemical method. The effect of La
substitution on the structural and ... [+]
Pure and lanthanum modified BFO LaxBi1−xFeO3, x=0.0, 0.08, 0.15, 0.30 thin films were
fabricated on Pt 111 /Ti/SiO2 / Si substrates by the soft chemical method. The effect of La
substitution on the structural and electrical properties was studied. Scanning electron microscopy,
x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while
the piezoelectric measurements were carried out using a setup based on an atomic force microscope.
It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved
leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by
the amount of lanthanum added to the system [-]
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Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in ANDRÉS BORT, Juan. Strain behavior of lanthanum modified BiFeO3 thin films prepoared via soft chemical method, 1980, vol. 104, p.104115, and may be found at http://jap.aip.org/jap/copyright.jsp
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