Voltage-Dependent Low-Field Bulk Resistivity in BaTiO3:Zn Ceramics
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Scholar |
Altres documents de l'autoria: Beltrán Mir, Héctor; Prades Tena, Marta; Masó, Nahum; Cordoncillo, Eloisa; West, Anthony R.
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7053
comunitat-uji-handle3:10234/8639
comunitat-uji-handle4:
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http://dx.doi.org/10.1111/j.1551-2916.2009.03416.x |
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Títol
Voltage-Dependent Low-Field Bulk Resistivity in BaTiO3:Zn CeramicsData de publicació
2010-02Editor
American Ceramic SocietyISSN
0002-7820Cita bibliogràfica
Journal of the American Ceramic Society (2010), 93, 2, p. 500-505Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://onlinelibrary.wiley.com/doi/10.1111/j.1551-2916.2009.03416.x/abstractResum
Ceramics of composition Ba(Ti1−xZnx)O3−x: 0.00003≤x≤0.01 exhibit modest semiconductivity, whose value is increased by up to two orders of magnitude under the action of a small dc bias voltage. The effect, which is not ... [+]
Ceramics of composition Ba(Ti1−xZnx)O3−x: 0.00003≤x≤0.01 exhibit modest semiconductivity, whose value is increased by up to two orders of magnitude under the action of a small dc bias voltage. The effect, which is not observed in undoped BaTiO3, occurs in both grain and grain boundary regions and is attributed to the nature of the defect structure, which contains highly polarized clusters. It is proposed that internal electron transfer within the clusters under the action of a dc bias voltage leads to a more conductive excited state, which gradually returns to the ground state when the dc bias is removed. [-]
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© 2009 The American Ceramic Society
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