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dc.contributor.authorBisquert, Juan
dc.contributor.authorMontero Martín, José María
dc.date.accessioned2012-10-31T15:40:54Z
dc.date.available2012-10-31T15:40:54Z
dc.date.issued2011-08
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/10234/50719
dc.description.abstractCharge carrier transport in disordered organic semiconductors, performed in electronic devices such as optoelectronic and photovoltaic ones, is usually affected by an exponential distribution of localized states in the band-gap (traps) under space-charge limited current. In this paper, we provide a full analysis for the trap-controlled transport of the single-carrier device in the frequency domain. Trap-limited mobility is interpreted in terms of the classical multiple-trapping picture with one transport state and the trapping-detrapping dynamics of the exponential density of traps. This allows us to provide a suitable explanation of the usual experimental features of the mobility dependence on voltage as along with the capacitance spectra.ca_CA
dc.format.extent6 p.ca_CA
dc.format.mimetypeapplication/pdfca_CA
dc.language.isoengca_CA
dc.publisher© American Institute of Physicsca_CA
dc.relation.isPartOfJournal of Applied Physics (August 2011) vol. 110, no. 4ca_CA
dc.rights.urihttp://rightsstatements.org/vocab/CNE/1.0/*
dc.subjectcarrier densityca_CA
dc.subjectcarrier mobilityca_CA
dc.subjectelectron trapsca_CA
dc.subjectorganic semiconductorsca_CA
dc.subjectspace-charge-limited conductionca_CA
dc.titleInterpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps.ca_CA
dc.typeinfo:eu-repo/semantics/articleca_CA
dc.identifier.doihttp://dx.doi.org/10.1063/1.3622615
dc.rights.accessRightsinfo:eu-repo/semantics/restrictedAccessca_CA
dc.relation.publisherVersionhttp://jap.aip.org/resource/1/japiau/v110/i4/p043705_s1ca_CA
dc.type.versioninfo:eu-repo/semantics/publishedVersion


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