Trap origin of field-dependent mobility of the carrier transport in organic layers
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http://dx.doi.org/10.1016/j.sse.2010.09.009 |
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Títol
Trap origin of field-dependent mobility of the carrier transport in organic layersData de publicació
2011Editor
ElsevierISSN
0038-1101Cita bibliogràfica
Solid-State Electronics (Jan. 2011), Vol. 55, no. 1, p. 1-4Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://www.sciencedirect.com/science/article/pii/S0038110110003473Versió
info:eu-repo/semantics/publishedVersionParaules clau / Matèries
Resum
In the measurements of space-charge limited current (SCLC) transport in disordered organic semiconductors, it is often observed that carriermobility depends on bias voltage. Two continuous models have been applied for ... [+]
In the measurements of space-charge limited current (SCLC) transport in disordered organic semiconductors, it is often observed that carriermobility depends on bias voltage. Two continuous models have been applied for the description of this dependence. One interpretation assumes the charge carriermobilitydependent on the local electrical field. In the other one, the mobility at the transport state is affected by the trapping–detrapping dynamics of an exponential distribution of localized states (traps) in the band-gap. Analysing the frequency dependent capacitance and conductance (corresponding to measurements of impedance spectroscopy, IS), we demonstrate that the apparent field-dependentmobility found in experiments can be interpreted in terms of the multiple trapping approach [-]
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