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dc.contributor.authorBisquert, Juan
dc.contributor.authorGarcia-Belmonte, Germà
dc.contributor.authorMunar, Antoni
dc.contributor.authorSessolo, Michele
dc.contributor.authorSoriano, Alejandra
dc.contributor.authorBolink, Henk J.
dc.date.accessioned2012-05-28T14:36:30Z
dc.date.available2012-05-28T14:36:30Z
dc.date.issued2008
dc.identifierhttp://dx.doi.org/10.1016/j.cplett.2008.09.035
dc.identifier.citationChemical Physics Letters, 465, p. 57-62
dc.identifier.issn92614
dc.identifier.urihttp://hdl.handle.net/10234/38949
dc.description.abstractCapacitance analysis of P3HT:PCBM bulk heterojunction solar cells, in dark and under illumination, shows a linear Mott-Schottky characteristic at moderate reverse bias, indicating p-doping of the organic blend. The flatband potential under illumination is displaced negatively about 0.6 V with respect to dark conditions. A basic photovoltaic model is developed to explain this, in terms of electron transfer via surface states at the metal/organic interface. Surface states with a slow exchange kinetics, become charged under illumination, unpinning the band and decreasing the depletion layer at the electron extraction contact. This becomes a major factor limiting the performance of bulk heterojunction solar cells. © 2008 Elsevier B.V. All rights reserved.
dc.language.isoeng
dc.publisherElsevier
dc.rights.urihttp://rightsstatements.org/vocab/CNE/1.0/*
dc.titleBand unpinning and photovoltaic model for P3HT:PCBM organic bulk heterojunctions under illumination
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doihttp://dx.doi.org/10.1016/j.cplett.2008.09.035
dc.rights.accessRightsinfo:eu-repo/semantics/closedAccess
dc.type.versioninfo:eu-repo/semantics/publishedVersion


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