Charge control in laterally coupled double quantum dots
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Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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Título
Charge control in laterally coupled double quantum dotsAutoría
Fecha de publicación
2011-07-27Editor
American Physical SocietyISSN
1098-0121; 1550-235XCita bibliográfica
Physical Review B (2011) vol. 84, no. 4Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://link.aps.org/doi/10.1103/PhysRevB.84.041308Versión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function ... [+]
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias, leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunneling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system. [-]
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© American Physical Society
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info:eu-repo/semantics/openAccess
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