Localized versus delocalized states: Photoluminescence from electrochemically synthesized ZnO nanowires
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Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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Título
Localized versus delocalized states: Photoluminescence from electrochemically synthesized ZnO nanowiresAutoría
Fecha de publicación
2009Editor
American Institute of PhysicsISSN
0021-8979Tipo de documento
info:eu-repo/semantics/articleVersión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
We analyze the near-band-edge photoluminescence of electrochemically deposited ZnO nanowires and directly correlate the photoluminescence properties with the carrier concentration in the nanowires as determined from ... [+]
We analyze the near-band-edge photoluminescence of electrochemically deposited ZnO nanowires and directly correlate the photoluminescence properties with the carrier concentration in the nanowires as determined from electrochemical impedance spectroscopy. We find a donor density of 81019 cm−3 in the as-deposited nanowires and show that the near-band-edge emission results from band-to-band recombination processes delocalized states. A photoluminescence band centered at 3.328 eV scales with the diameter of the nanowires and is assigned to recombination processes involving surface states. We show that annealing at 500 °C in air reduces the donor density in the nanowires by more than one order of magnitude, leading to sharp excitonic transitions in the electrochemically deposited nanowires [-]
Publicado en
Journal of Applied Physics, vol. 106, no. 5 (2009)Derechos de acceso
© American Institute of Physics
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info:eu-repo/semantics/openAccess
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/openAccess
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