Visualitza Departament: Física per autoria "76e749d0-fcec-41dc-a280-11ff1d8c3b99"
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Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system
Gonzales, Cedric; Prieto, Elizabeth Ann; Catindig, Gerald Angelo; Reyes Moreno, Alexander; Faustino, Maria Angela; Tumanguil-Quitoras, Mae Agatha; Husay, Horace Andrew; Vasquez, John Daniel; Somintac, Armando; Estacio, Elmer; Salvador, Arnel American Statistical Association (2021-04-22)Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. The GaAs epilayers are grown by molecular beam epitaxy on exactly oriented Si (100) substrates at three different temperatures ...