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dc.contributor.authorClimente, Juan I.
dc.contributor.authorRoyo Valls, Miguel
dc.contributor.authorMovilla, Jose L.
dc.contributor.authorPlanelles, Josep
dc.date.accessioned2011-06-14T11:59:20Z
dc.date.available2011-06-14T11:59:20Z
dc.date.issued2009
dc.identifier.citationCLIMENTE, Juan I., et al. Strong configuration mixing due to dielectric confinement in semiconductor nanorods. Physical Review B, 2009, vol. 79, no 16, p. 161301.
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/10234/23348
dc.description.abstractThe interaction between electron-electron and electron-hole pairs in semiconductor nanorods embedded in dielectric media is investigated using a configuration-interaction method. Contrary to spherical quantum dots of similar volume, the dielectric confinement is shown to bring nanorods into a regime of strong configuration mixing. The wave functions are particularly sensitive to such mixing, which leads to qualitative changes in the electronic and optical properties of the rods
dc.format.extent4 p.
dc.language.isoeng
dc.publisherAmerican Physical Society
dc.relation.isPartOfPhysical Review, Series B, 2009, vol. 79, no. 16
dc.rights© American Physical Society
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/*
dc.subjectNanorods
dc.subjectDielectric
dc.subjectQuantum dots
dc.titleStrong configuration mixing due to dielectric confinement in semiconductor nanorods
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.79.161301
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.relation.publisherVersionhttp://link.aps.org/doi/10.1103/PhysRevB.79.161301
dc.type.versioninfo:eu-repo/semantics/publishedVersion


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