Metallic behavior in STO/LAO heterostructures with non-uniformly atomic interfaces
Impacto
Scholar |
Otros documentos de la autoría: Ciola Amoresi, Rafael Aparecido; Cichetto Junior, Leonélio; Gouveia, Amanda F.; Colmenares, Yormary N.; Teodoro, Marcio D.; Marques, Gilmar Eugenio; Longo, Elson; Simões, Alexandre; Andres, Juan; Chiquito, Adenilson J.; Zaghete, Maria A.
Metadatos
Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
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INVESTIGACIONMetadatos
Título
Metallic behavior in STO/LAO heterostructures with non-uniformly atomic interfacesAutoría
Fecha de publicación
2020Editor
ElsevierCita bibliográfica
Amoresi, R. A., Cichetto Jr, L., Gouveia, A. F., Colmenares, Y. N., Teodoro, M. D., Marques, G. E., ... & Zaghete, M. A. (2020). Metallic behavior in STO/LAO heterostructures with non-uniformly atomic interfaces. Materials Today Communications, 24, 101339.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://www.sciencedirect.com/science/article/pii/S2352492820323503Versión
info:eu-repo/semantics/acceptedVersionPalabras clave / Materias
Resumen
The search for new and low-power switching devices involving the integration of semiconductor thin films is of
interest, and has led to renewed research because such devices may exhibit innovative properties. Here, ... [+]
The search for new and low-power switching devices involving the integration of semiconductor thin films is of
interest, and has led to renewed research because such devices may exhibit innovative properties. Here, we
investigate the two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface with metallic and insulator
behavior. Insight is offered by quantifying the interface charge distribution associated with structural and
electronic order-disorder effects. Variations in the electron conductivity were observed to be associated with
different specific clustering arrangements of both Ti and Al cations of the co-exposed surfaces at the interface,
i.e., structural and electronic connectivity among the undercoordinated [TiO ]5 and [AlO ]5 clusters. These results
indicate facet control as a strategy for enhancing the electric and magnetic properties of a device via the
quantum confinement of electrons. [-]
Publicado en
Materials Today Communications, 2020Entidad financiadora
CEPID/CDMF | Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) | Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPQ) | Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior (CAPES) | Ministerio de Economía y Competitividad | Generalitat Valenciana | Ministerio de Ciencia, Innovacion y Universidades | Universitat Jaume I
Código del proyecto o subvención
2013/07296-2 | 2014/01371-5 | 2017/23663-6 | 2018/01914-0 | 2019/09296-6 | 2017/19143-7 | 150949/2018-9 | II/2014/022 | ACOMP/2015/1202 | CTQ2015-65207-P | PGC2018-094417-B-I00 | UJI-B2016-25
Derechos de acceso
2352-4928/ © 2020 Elsevier Ltd. All rights reserved.
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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