In Operando, Photovoltaic, and Microscopic Evaluation of Recombination Centers in Halide Perovskite-Based Solar Cells
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Scholar |
Otros documentos de la autoría: Zohar, Arava; Kulbak, Michael; Turren Cruz, Silver Hamill; Nayak, Pabitra K.; Kama, Adi; Hagfeldt, Anders; Snaith, Henry J.; Hodes, Gary; Cahen, David
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INVESTIGACIONMetadatos
Título
In Operando, Photovoltaic, and Microscopic Evaluation of Recombination Centers in Halide Perovskite-Based Solar CellsAutoría
Fecha de publicación
2022-08-03Editor
American Chemical SocietyISSN
1944-8244; 1944-8252Cita bibliográfica
Zohar, A.; Kulbak, M.; Turren-Cruz, S. H.; Nayak, P. K.; Kama, A.; Hagfeldt, A.; Snaith, H. J.; Hodes, G.; Cahen, D. In Operando, Photovoltaic, and Microscopic Evaluation of Recombination Centers in Halide Perovskite-Based Solar Cells. ACS Appl. Mater. Interfaces. 2022, 14 (30), 34171-34179. DOI: 10.1021/acsami.1c08675Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://pubs.acs.org/doi/full/10.1021/acsami.1c08675Versión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
The origin of the low densities of electrically active defects in Pb halide perovskite (HaP), a crucial factor for their use in photovoltaics, light emission, and radiation detection, remains a matter of discussion, ... [+]
The origin of the low densities of electrically active defects in Pb halide perovskite (HaP), a crucial factor for their use in photovoltaics, light emission, and radiation detection, remains a matter of discussion, in part because of the difficulty in determining these densities. Here, we present a powerful approach to assess the defect densities, based on electric field mapping in working HaP-based solar cells. The minority carrier diffusion lengths were deduced from the electric field profile, measured by electron beam-induced current (EBIC). The EBIC method was used earlier to get the first direct evidence for the n-i-p junction structure, at the heart of efficient HaP-based PV cells, and later by us and others for further HaP studies. This manuscript includes EBIC results on illuminated cell cross sections (in operando) at several light intensities to compare optoelectronic characteristics of different cells made by different groups in several laboratories. We then apply a simple, effective single-level defect model that allows deriving the densities (Nr) of the defect acting as recombination center. We find Nr ≈ 1 × 1013 cm–3 for mixed A cation lead bromide-based HaP films and ∼1 × 1014 cm–3 for MAPbBr3(Cl). As EBIC photocurrents are similar at the grain bulk and boundaries, we suggest that the defects are at the interfaces with selective contacts rather than in the HaP film. These results are relevant for photovoltaic devices as the EBIC responses distinguish clearly between high- and low-efficiency devices. The most efficient devices have n-i-p structures with a close-to-intrinsic HaP film, and the selective contacts then dictate the electric field strength throughout the HaP absorber. [-]
Publicado en
ACS applied materials & interfaces, 2021, vol. 14, no 30Entidad financiadora
Dears Foundation | Minerva Centre for Self-Repairing Systems for Energy and Sustainability | Ministry of National Infrastructure, Energy and Water Resources | Ullmann Family Foundation | Weizmann Institute of Science | Yotam Project
Derechos de acceso
info:eu-repo/semantics/openAccess
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