Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process
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Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set ProcessFecha de publicación
2023Editor
ACS PublicationsCita bibliográfica
J. Phys. Chem. Lett. 2023, 14, 6, 1395–1402Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://pubs.acs.org/doi/full/10.1021/acs.jpclett.2c03669#Versión
info:eu-repo/semantics/publishedVersionResumen
With the increasing demand for artificially intelligent hardware systems for
brain-inspired in-memory and neuromorphic computing, understanding the underlying
mechanisms in the resistive switching of memristor devices ... [+]
With the increasing demand for artificially intelligent hardware systems for
brain-inspired in-memory and neuromorphic computing, understanding the underlying
mechanisms in the resistive switching of memristor devices is of paramount importance.
Here, we demonstrate a two-step resistive switching set process involving a complex interplay
among mobile halide ions/vacancies (I−/VI
+
) and silver ions (Ag+
) in perovskite-based
memristors with thin undoped buffer layers. The resistive switching involves an initial gradual
increase in current associated with a drift-related halide migration within the perovskite bulk
layer followed by an abrupt resistive switching associated with diffusion of mobile Ag+
conductive filamentary formation. Furthermore, we develop a dynamical model that explains
the characteristic I−V curve that helps to untangle and quantify the switching regimes
consistent with the experimental memristive response. This further insight into the two-step set
process provides another degree of freedom in device design for versatile applications with
varying levels of complexity [-]
Publicado en
The Journal of Physical Chemistry Letters, Vol. 14, 2023Entidad financiadora
Generalitat Valenciana | Ministerio de Ciencia e Innovación
Código del proyecto o subvención
GRISOLIAP/ 2019/048 | PID2019-107348GB-100
Derechos de acceso
© 2023 The Authors. Published by American Chemical Society
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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