Defect governed zinc-rich columnar AZO thin film and contact interface for enhanced performance of thermocouples
Ver/ Abrir
Impacto
Scholar |
Otros documentos de la autoría: Luo, Bingwei; Cao, Lili; Zhang, Jinyang; Fei, LUO; Zhou, Haitao; Kexin, Ma; Beltrán-Pitarch, Braulio; Solis de la Fuente, Mauricio; Vidan-Falomir, Francisco; García-Cañadas, Jorge
Metadatos
Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7034
comunitat-uji-handle3:10234/8619
comunitat-uji-handle4:
INVESTIGACIONMetadatos
Título
Defect governed zinc-rich columnar AZO thin film and contact interface for enhanced performance of thermocouplesAutoría
Fecha de publicación
2022-03-01Editor
Royal Society of ChemistryISSN
1463-9076; 1463-9084Cita bibliográfica
Luo, B., Cao, L., Zhang, J., Luo, F., Zhou, H., Ma, K., ... & García-Cañadas, J. (2022). Defect governed zinc-rich columnar AZO thin film and contact interface for enhanced performance of thermocouples. Physical Chemistry Chemical Physics, 24(11), 6905-6914.Tipo de documento
info:eu-repo/semantics/articleVersión
info:eu-repo/semantics/acceptedVersionPalabras clave / Materias
Resumen
The research on the stable thermoelectric properties and contact interface of high-precision thin-film thermocouples lags far behind the demand. In this study, a zinc-rich Al-doped ZnO (AZO) thin film was fabricated, ... [+]
The research on the stable thermoelectric properties and contact interface of high-precision thin-film thermocouples lags far behind the demand. In this study, a zinc-rich Al-doped ZnO (AZO) thin film was fabricated, in which the carriers were mainly donated by the Al dopant, and the oxygen defects migrated together, forming cage defects. Then, an indium tin oxide (ITO)/AZO thin-film thermocouple was prepared. It had a special temperature-dependent voltage curve due to the effects of cage defects on the thermoelectric properties of the AZO thin film and interfacial electron diffusion. When the zinc atoms in the cage defects were excited after annealing, a linear relationship between the temperature and voltage was obtained. The Seebeck coefficient of the thermocouple was constant at 168 μV K−1 over the entire measured temperature range. In addition, the calculated error of the thermocouple was lower than 1% from 50 °C to 500 °C, showing good repeatability. These results showed that defect engineering could effectively be used to improve the temperature range stability of thermoelectric materials and optimize the precision of thin-film thermocouples. [-]
Publicado en
Physical Chemistry Chemical Physics. Issue 11, 2022Entidad financiadora
National Natural Science Foundation of China | Scientific Research Project of Beijing Educational Committee | Key Project of Independent Innovation Special Fund, AECC | Spanish Agencia Estatal de Investigación
Código del proyecto o subvención
Grant no. 61704006 | Grant no. KM202111232015 | Grant no. JK65200309 | RYC-2013-13970
Título del proyecto o subvención
Ramón y Cajal program
Derechos de acceso
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
Aparece en las colecciones
- ESID_Articles [478]