Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite Memristors
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Show full item recordcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/160292
comunitat-uji-handle3:10234/160293
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INVESTIGACIONMetadata
Title
Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite MemristorsAuthor (s)
Date
2022-03-01Publisher
American Chemical SocietyISSN
2380-8195Bibliographic citation
Berruet, M.; Pérez-Martínez, J. C.; Romero, B.; Gonzales, C.; Al-Mayouf, A. M.; Guerrero, A.; Bisquert, J. Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite Memristor. ACS Energy Lett. 2022, 7 (3), 1214-1222. DOI: 10.1021/acsenergylett.2c00121Type
info:eu-repo/semantics/articlePublisher version
https://pubs.acs.org/doi/abs/10.1021/acsenergylett.2c00121Version
info:eu-repo/semantics/publishedVersionSubject
Abstract
An investigation of the kinetic behavior of MAPbI3 memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive ... [+]
An investigation of the kinetic behavior of MAPbI3 memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive and inductive patterns. We develop a dynamic model to describe these features and obtain physical insight into the coupling of ionic and electronic properties that produce the resistive switching behavior. The model separates the memristive response into distinct diffusion and transition-state-formation steps that describe well the experimental current–voltage curves at different scan rates and impedance spectra. The ac impedance analysis shows that the halide perovskite memristor response contains the composition of two inductive processes that provide a huge negative capacitance associated with inverted hysteresis. The results provide a new approach to understand some typical characteristics of halide perovskite devices, such as the inductive behavior and hysteresis effects, according to the time scales of internal processes. [-]
Is part of
ACS Energy Lett. 2022, 7, 3, 1214-1222Funder Name
Generalitat Valenciana | Ministerio de Ciencia, Innovación y Universidades | CONICET | Comunidad de Madrid | Universidad Rey Juan Carlos
Project code
GRISOLIAP/2019/048 | MICIU/ICTI2017-2020/PID2019-107348GB-100 | Extern Fellowship 2020 | S2018/NMT-4326-SINFOTON2-CM | M2363
Rights
Copyright © 2022 The Authors. Published by American Chemical Society
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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