Locating the Frequency of Turnover in Thin-Film Diffusion Impedance
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comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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INVESTIGACIONMetadata
Title
Locating the Frequency of Turnover in Thin-Film Diffusion ImpedanceDate
2021-07-12Publisher
American Chemical SocietyISSN
1932-7447; 1932-7455Bibliographic citation
Mathijs Janssen and Juan Bisquert The Journal of Physical Chemistry C 2021 125 (28), 15737-15741 DOI: 10.1021/acs.jpcc.1c04572Type
info:eu-repo/semantics/articlePublisher version
https://pubs.acs.org/journal/jpccckVersion
info:eu-repo/semantics/publishedVersionSubject
Abstract
The impedance of diffusion is an important tool to investigate
a wide variety of systems, including electrochemical devices such as Li-ion
batteries, porous electrodes, and solar cells. The classical impedance model ... [+]
The impedance of diffusion is an important tool to investigate
a wide variety of systems, including electrochemical devices such as Li-ion
batteries, porous electrodes, and solar cells. The classical impedance model for
diffusion in a thin layer with a blocking boundary contains two separate
regimes: Warburg diffusion at high frequency and capacitive charging at low
frequency. Here, we provide a physical criterion for the transition between
these two regimes, as the point of closest approach between early- and latetime approximations of the exact diffusion current. The resulting frequency is
(π2
/2)ωd with respect to the natural frequency ωd = Dn/L2
, with Dn being the
diffusion constant and L being the thickness of the layer. [-]
Is part of
J. Phys. Chem. C 2021, 125, 15737−15741Funder Name
Generalitat Valenciana
Project code
PROMETEO/2020/028
Rights
Copyright © 2021 The Authors. Published by American Chemical Society
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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