Laser/Electron Irradiation on Indium Phosphide (InP) Semiconductor: Promising Pathways to In Situ Formation of Indium Nanoparticles
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Altres documents de l'autoria: Assis, Marcelo de; Guerra Macedo, Nadia; Machado, Thales Rafael; Ferrer, Mateus M.; Gouveia, Amanda; Cordoncillo, Eloisa; Torres-Mendieta, Rafael; Beltrán Mir, Héctor; Mínguez-Vega, Gladys; Leite, Edson R.; Sambrano, Julio; Andres, Juan; Longo, Elson
Metadades
Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7053
comunitat-uji-handle3:10234/8639
comunitat-uji-handle4:
INVESTIGACIONMetadades
Títol
Laser/Electron Irradiation on Indium Phosphide (InP) Semiconductor: Promising Pathways to In Situ Formation of Indium NanoparticlesAutoria
Data de publicació
2018Editor
WileyISSN
0934-0866; 1521-4117Cita bibliogràfica
ASSIS, Marcelo, et al. Laser/Electron Irradiation on Indium Phosphide (InP) Semiconductor: Promising Pathways to In Situ Formation of Indium Nanoparticles. Particle & Particle Systems Characterization, 2018, p. 1800237.Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
https://onlinelibrary.wiley.com/doi/10.1002/ppsc.201800237Versió
info:eu-repo/semantics/submittedVersionParaules clau / Matèries
Resum
In the current study, whether femtosecond laser and electron beam irradiation of indium phosphide (InP) are “green,” fast, and effective methods to produce metallic In nanoparticles is probed. High-resolution transm ... [+]
In the current study, whether femtosecond laser and electron beam irradiation of indium phosphide (InP) are “green,” fast, and effective methods to produce metallic In nanoparticles is probed. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy are employed to investigate the formation and growth of In nanoparticles on InP. Density functional theory and quantum theory of atoms in molecules calculations are employed to reveal the nature of formation of In nanoparticles under electron beam irradiation. These results expand the fundamental understanding of the atomic processes underpinning the mechanism of In−P bond rupture during the transformation process induced by the electron irradiation of the InP crystal by increasing the total number of electrons in the bulk structure. [-]
Publicat a
Part. Part. Syst. Charact.2018, 35, 1800237Proyecto de investigación
PrometeoII/2014/022; Prometeo/2016/079; AICO/2016/036; ACOMP/2014/270; ACOMP/2015/1202; TQ2015-65207-P; FIS2016-75618-R; MAT2016-80410-P; PHBP14-00020; RX15/00261; UJIB2016-38; UJI-B2016-25Drets d'accés
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
"This is the pre-peer reviewed version of the following article: ASSIS, Marcelo, et al. Laser/Electron Irradiation on Indium Phosphide (InP) Semiconductor: Promising Pathways to In Situ Formation of Indium Nanoparticles. Particle & Particle Systems Characterization, 2018, p. 1800237., which has been published in final form at https://doi.org/10.1002/ppsc.201800237. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions."
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/openAccess
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/openAccess
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