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dc.contributor.authorJovaní, Marc
dc.contributor.authorBeltrán Mir, Héctor
dc.contributor.authorCordoncillo, Eloisa
dc.contributor.authorWest, Anthony R.
dc.date.accessioned2017-09-06T07:50:30Z
dc.date.available2017-09-06T07:50:30Z
dc.date.issued2017-05
dc.identifier.citationJOVANÍ, Marc, et al. Atmosphere-and Voltage-Dependent Electronic Conductivity of Oxide-Ion-Conducting Zr1–x Y x O2–x/2 Ceramics. Inorg. Chem., 2017, 56 (12), pp 7081–7088ca_CA
dc.identifier.urihttp://hdl.handle.net/10234/168573
dc.description.abstractCubic, fluorite-structured solid solutions Zr1-xYxO2-x/2 (YSZ; x = 0.4-0.7) were prepared by sol-gel synthesis. Impedance measurements on pellets of 85% approximate density sintered at 1300 °C for 24 h showed strong evidence of oxide ion conduction with an inclined Warburg spike at low frequencies and capacitance values of ∼10-6 F cm-1 at 40 Hz. Arrhenius plots of total pellet conductivities were linear with activation energies of 1.4-1.56 eV. The conductivity decreased with x and was 2-4 orders of magnitude lower than that with optimized YSZ, x = 0.08. When the atmosphere was changed from N2 to O2 during impedance measurements, two reversible effects were seen: the Warburg spike contracted greatly, and the sample resistance decreased. These effects were more noticeable at higher x and are attributed to the introduction of p-type electronic conduction, in parallel with the preexisting oxide ion conduction. A similar reversible result was observed upon application of a direct-current (dc) bias during impedance measurements. When either pO2 is increased or a dc bias is applied, hole creation is believed to arise by the ionization of underbonded oxide ions situated near the Y3+ dopant ions. The ionized electrons are trapped at surface oxygen species, and the holes that are left on oxygen are responsible for p-type conduction. The electrolytic domain of x = 0.4-0.7 extends up to approximately 10-2 atm of O2 before p-type conduction is observed. The upper pO2 limit of the electrolytic domain of x = 0.08 is not known but is likely to be close to or slightly above 1 atm of O2.ca_CA
dc.format.extent7 p.ca_CA
dc.format.mimetypeapplication/pdfca_CA
dc.language.isoengca_CA
dc.publisherACSca_CA
dc.relation.isPartOfInorg. Chem., 2017, 56 (12)ca_CA
dc.rights© 2017 American Chemical Society.ca_CA
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/*
dc.subjectoxide ionca_CA
dc.subjectconductivityca_CA
dc.subjectelectronic conductionca_CA
dc.titleAtmosphere- and Voltage-Dependent Electronic Conductivity of Oxide-Ion-Conducting Zr1-xYxO2-x/2 Ceramicsca_CA
dc.typeinfo:eu-repo/semantics/articleca_CA
dc.identifier.doihttps://doi.org/10.1016/10.1021/acs.inorgchem.7b00673
dc.relation.projectIDM.J., H.B.-M., and E.C. thank the Universidad Jaume I (Project UJI-B2016-38) and Ministerio de Economiá , Industria y Competitividad (Project MAT2016-80410-P), for financial support. M.J. also thanks the Universidad Jaume I for a fellowship.ca_CA
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessca_CA
dc.relation.publisherVersionhttp://pubs.acs.org/doi/abs/10.1021/acs.inorgchem.7b00673ca_CA
dc.type.versioninfo:eu-repo/semantics/acceptedVersionca_CA


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