Analysis of the Hysteresis Behavior of Perovskite Solar Cells with Interfacial Fullerene Self-Assembled Monolayers
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Other documents of the author: Vallés Pelarda, Marta; Clasen Hames, Bruno; García-Benito, Inés; Almora Rodríguez, Osbel; Molina-Ontoria, Agustín; S. Sánchez, Rafael; Garcia-Belmonte, Germà; Martín, Nazario; Mora-Sero, Ivan
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Title
Analysis of the Hysteresis Behavior of Perovskite Solar Cells with Interfacial Fullerene Self-Assembled MonolayersAuthor (s)
Date
2016-10Publisher
American Chemical SocietyBibliographic citation
VALLES-PELARDA, Marta, et al. Analysis of the Hysteresis Behavior of Perovskite Solar Cells with Interfacial Fullerene Self-Assembled Monolayers. The Journal of Physical Chemistry Letters, 2016, vol. 7, no 22, p. 4622-4628.Type
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http://pubs.acs.org/doi/abs/10.1021/acs.jpclett.6b02103Version
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Abstract
The use of self-assembled monolayers (SAMs) of fullerene derivatives reduces the hysteresis of perovskite solar cells (PSCs). We have investigated three different fullerene derivatives observing a decrease on hysteresis ... [+]
The use of self-assembled monolayers (SAMs) of fullerene derivatives reduces the hysteresis of perovskite solar cells (PSCs). We have investigated three different fullerene derivatives observing a decrease on hysteresis for all the cases. Several processes can contribute to the hysteresis behavior on PSCs. We have determined that the reduced hysteresis observed for devices with SAMs is produced by a decrease of the capacitive hysteresis. In addition, with an appropriated functionalization, SAMs can increase photocurrent even when no electron selective contact (ESC) is present and a SAM is deposited just on top of the transparent conductive oxide. Appropriated functionalization of the fullerene derivative, as introducing -CN groups, can enhance cell performance and reduce hysteresis. This work paves the way for a future enhancement of PSCs by a tailored design of the fullerene molecules that could actuate as an ESC by themselves. [-]
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J. Phys. Chem. Lett., 2016, 7 (22)Rights
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