Listar INAM_Articles por fuente "J. Phys. Chem. Lett. 2024, 15, 6496−6503"
Mostrando ítems 1-1 de 1
-
Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory
American Chemical Society (2024-06-13)With the increasing demands and complexity of the neuromorphic computing schemes utilizing highly efficient analog resistive switching devices, understanding the apparent capacitive and inductive effects in device operation ...