Listar INAM_Articles por fuente "IEEE Electron Device Letters, 2023, vol. 44, no 8"
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Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-Based Memristors
Institute of Electrical and Electronics Engineers (2023-08)Bias voltage scan rate and mobile ion concentration have a strong influence in J-V curves of metal halide perovskite-based memristors. In addition to hysteresis, in some cases J-V curves also show an anomalous drop in ...