Listar INAM_Articles por autoría "c4a36091-6910-423a-a3c7-7d58b879a571"
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Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-Based Memristors
Pérez-Martínez, José Carlos; Martín Martín, Diego; Del Pozo, Gonzalo; Arredondo, Belén; Guerrero, Antonio; Romero, Beatriz Institute of Electrical and Electronics Engineers (2023-08)Bias voltage scan rate and mobile ion concentration have a strong influence in J-V curves of metal halide perovskite-based memristors. In addition to hysteresis, in some cases J-V curves also show an anomalous drop in ... -
Role of Metal Contacts on Halide Perovskite Memristors
Pérez-Martínez, José Carlos; Berruet, Mariana; Gonzales, Cedric; Salehpour, Saeed; Bahari, Ali; Arredondo, Belén; Guerrero, Antonio Wiley (2023-10-16)Halide perovskites are promising candidates for resistive memories (memristors) due to their mixed electronic/ionic conductivity and the real activation mechanism is currently under debate. In order to unveil the role of ...