Listar INAM_Articles por autoría "6e4b4423-1ee2-401f-8934-585150310553"
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Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-Based Memristors
Pérez-Martínez, José Carlos; Martín Martín, Diego; Del Pozo, Gonzalo; Arredondo, Belén; Guerrero, Antonio; Romero, Beatriz Institute of Electrical and Electronics Engineers (2023-08)Bias voltage scan rate and mobile ion concentration have a strong influence in J-V curves of metal halide perovskite-based memristors. In addition to hysteresis, in some cases J-V curves also show an anomalous drop in ... -
Long-term potentiation mechanism of biological postsynaptic activity in neuro-inspired halide perovskite memristors
HERNÁNDEZ-BALAGUERA, ENRIQUE; Muñoz-Díaz, Laura; Bou, Agustín; Romero, Beatriz; Ilyassov, Baurzhan; Guerrero, Antonio; Bisquert, Juan IOP Publishing (2023-05-26)Perovskite memristors have emerged as leading contenders in brain-inspired neuromorphic electronics. Although these devices have been shown to accurately reproduce synaptic dynamics, they pose challenges for in-depth ... -
Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite Memristors
Berruet, Mariana; Pérez-Martínez, José Carlos; Romero, Beatriz; Gonzales, Cedric; Al-Mayouf, Abdullah; Guerrero, Antonio; Bisquert, Juan American Chemical Society (2022-03-01)An investigation of the kinetic behavior of MAPbI3 memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive and ...