Listar INAM_Articles por autoría "609de5ac-c38b-452b-86d3-938c24ac3d84"

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    • closedAccess   Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-Based Memristors 

      Pérez-Martínez, José Carlos; Martín Martín, Diego; Del Pozo, Gonzalo; Arredondo, Belén; Guerrero, Antonio; Romero, Beatriz Institute of Electrical and Electronics Engineers (2023-08)
      Bias voltage scan rate and mobile ion concentration have a strong influence in J-V curves of metal halide perovskite-based memristors. In addition to hysteresis, in some cases J-V curves also show an anomalous drop in ...

    • openAccess   Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite Memristors 

      Berruet, Mariana; Pérez-Martínez, José Carlos; Romero, Beatriz; Gonzales, Cedric; Al-Mayouf, Abdullah; Guerrero, Antonio; Bisquert, Juan American Chemical Society (2022-03-01)
      An investigation of the kinetic behavior of MAPbI3 memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive and ...

    • openAccess   Role of Metal Contacts on Halide Perovskite Memristors 

      Pérez-Martínez, José Carlos; Berruet, Mariana; Gonzales, Cedric; Salehpour, Saeed; Bahari, Ali; Arredondo, Belén; Guerrero, Antonio Wiley (2023-10-16)
      Halide perovskites are promising candidates for resistive memories (memristors) due to their mixed electronic/ionic conductivity and the real activation mechanism is currently under debate. In order to unveil the role of ...