Listar INAM_Articles por autoría "1425aa4d-c3b9-4d9b-a65c-7b3a94b24b20"

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    • openAccess   Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite Memristors 

      Berruet, Mariana; Pérez-Martínez, José Carlos; Romero, Beatriz; Gonzales, Cedric; Al-Mayouf, Abdullah; Guerrero, Antonio; Bisquert, Juan American Chemical Society (2022-03-01)
      An investigation of the kinetic behavior of MAPbI3 memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive and ...

    • openAccess   Role of Metal Contacts on Halide Perovskite Memristors 

      Pérez-Martínez, José Carlos; Berruet, Mariana; Gonzales, Cedric; Salehpour, Saeed; Bahari, Ali; Arredondo, Belén; Guerrero, Antonio Wiley (2023-10-16)
      Halide perovskites are promising candidates for resistive memories (memristors) due to their mixed electronic/ionic conductivity and the real activation mechanism is currently under debate. In order to unveil the role of ...