ListarInstitute of Advanced Materials (INAM) por tema "memristors"
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Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory
American Chemical Society (2024-06-13)With the increasing demands and complexity of the neuromorphic computing schemes utilizing highly efficient analog resistive switching devices, understanding the apparent capacitive and inductive effects in device operation ... -
Dynamic Instability and Time Domain Response of a Model Halide Perovskite Memristor for Artificial Neurons
American Chemical Society (2022-04-22)Memristors are candidate devices for constructing artificial neurons, synapses, and computational networks for brainlike information processing and sensory-motor autonomous systems. However, the dynamics of natural neurons ... -
Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style Models
Wiley (2024)Halide perovskites are at the forefront of active research in many applications, such as high performance solar cells, photodetectors, and synapses and neurons for neuromorphic computation. As a result of ion transport and ... -
Impedance Spectroscopy Dynamics of Biological Neural Elements: From Memristors to Neurons and Synapses
American Chemical Society (2021-09-09)Understanding the operation of neurons and synapses is essential to reproducing biological computation. Building artificial neuromorphic networks opens the door to a new generation of faster and low-energy-consuming ... -
Negative inductor effects in nonlinear two-dimensional systems: Oscillatory neurons and memristors
American Institute of Physics (2022-11-21)Many chemical and physical systems show self-sustained oscillations that can be described by a set of nonlinear differential equations. The system enters oscillatory behavior by an intrinsic instability that leads to ... -
Perovskite Thin Single Crystal for a High Performance and Long Endurance Memristor
Wiley (2024)Metal halide perovskites (MHPs) exhibit electronic and ionic characteristics suitable for memristors. However, polycrystalline thin film perovskite memristors often suffer from reliability issues due to grain boundaries, ... -
Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite Memristors
American Chemical Society (2022-03-01)An investigation of the kinetic behavior of MAPbI3 memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive and ... -
Role of Metal Contacts on Halide Perovskite Memristors
Wiley (2023-10-16)Halide perovskites are promising candidates for resistive memories (memristors) due to their mixed electronic/ionic conductivity and the real activation mechanism is currently under debate. In order to unveil the role of ... -
The impedance of spiking neurons coupled by time-delayed interaction
Wiley (2022-04-01)The synchronization of populations of interacting spiking neurons is a topic of interest for understanding the operation of the brain and for developing oscillatory-based biomimetic computation. The analysis of the operation ...