ListarInstitute of Advanced Materials (INAM) por tema "memristor"
Mostrando ítems 1-4 de 4
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Device physics recipe to make spiking neurons
American Institute of Physics (2023-09-26)Neurons, which are made of biological tissue, exhibit cognitive properties that can be replicated in various material substrates. To create brain-inspired computational artificial systems, we can construct microscopic ... -
Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-Based Memristors
Institute of Electrical and Electronics Engineers (2023-08)Bias voltage scan rate and mobile ion concentration have a strong influence in J-V curves of metal halide perovskite-based memristors. In addition to hysteresis, in some cases J-V curves also show an anomalous drop in ... -
Resistance transient dynamics in switchable perovskite memristors
AIP Publishing (2023-09)Memristor devices have been investigated for their properties of resistive modulation that can be used in data storage and brain-like computation elements as artificial synapses and neurons. Memristors are characterized ... -
Spectral properties of the dynamic state transition in metal halide perovskite-based memristor exhibiting negative capacitance
American Institute of Physics (2021-02-15)The evolution of device properties in memristor switching between high- and low-resistance states is critical for applications and is still highly subjected to significant ambiguity. Here, we present the dynamic state ...