ListarInstitute of Advanced Materials (INAM) por tema "magnetic random-access memory"

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    • openAccess   Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance 

      Shi, Jiacheng; Arpaci, Sevdenur; Lopez-Dominguez, Victor; Sangwan, Vinod K.; Mahfouzi, Farzad; Kim, Jinwoong; Athas, Jordan G.; Hamdi, Mohammad; Aygen, Can; Arava, Hanu; Phatak, Charudatta; Carpentieri, Mario; Jiang, Jidong S.; Grayson, Matthew A.; Kioussis, Nicholas; Finocchio, Giovanni; Hersam, Mark C.; Khalili Amiri, Pedram Wiley (2024-06-13)
      Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous ...