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Electrons, holes, and excitons in GaAs polytype quantum dots
dc.contributor.author | Climente, Juan I. | |
dc.contributor.author | Segarra, Carlos | |
dc.contributor.author | Rajadell Viciano, Fernando | |
dc.contributor.author | Planelles, Josep | |
dc.date.accessioned | 2016-05-25T12:00:52Z | |
dc.date.available | 2016-05-25T12:00:52Z | |
dc.date.issued | 2016 | |
dc.identifier.citation | CLIMENTE, Juan I., et al. Electrons, holes, and excitons in GaAs polytype quantum dots. Journal of Applied Physics, 2016, vol. 119, no 12, p. 125705 | ca_CA |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/10234/159980 | |
dc.description.abstract | Single and multi-band k⋅p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization,valence band mixing, and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorius et al., Nano Lett. 15, 2652 (2015)], it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al., Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture, and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes. | ca_CA |
dc.description.sponsorShip | We are grateful to P. Caroff, M. E. Pistol, and B. Loitsch for useful discussions. Support from UJI Project No. P1-1B2014-24, MINECO Project No. CTQ2014-60178-P, and a FPU grant (C.S.) is acknowledged. | ca_CA |
dc.format.extent | 10 p. | ca_CA |
dc.format.mimetype | application/pdf | ca_CA |
dc.language.iso | eng | ca_CA |
dc.publisher | American Institute of Physics | ca_CA |
dc.relation.isPartOf | Journal of Applied Physics, 2016, vol. 119 | ca_CA |
dc.rights | © 2016 AIP Publishing LLC | ca_CA |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | * |
dc.subject | Quantum dots | ca_CA |
dc.subject | Polarization | ca_CA |
dc.subject | Ground states | ca_CA |
dc.subject | III-V semiconductors | ca_CA |
dc.subject | Electrons | ca_CA |
dc.title | Electrons, holes, and excitons in GaAs polytype quantum dots | ca_CA |
dc.type | info:eu-repo/semantics/article | ca_CA |
dc.identifier.doi | http://dx.doi.org/10.1063/1.4945112 | |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | ca_CA |
dc.relation.publisherVersion | http://scitation.aip.org/content/aip/journal/jap/119/12/10.1063/1.4945112 | ca_CA |
dc.type.version | info:eu-repo/semantics/publishedVersion | ca_CA |
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