Hole spin relaxation in InAS/GaAs quantum dot molecules
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Altres documents de l'autoria: Segarra, Carlos; Climente, Juan I.; Rajadell Viciano, Fernando; Planelles, Josep
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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Hole spin relaxation in InAS/GaAs quantum dot moleculesData de publicació
2015-09Editor
IOP Publishing LtdCita bibliogràfica
SEGARRA, C., et al. Hole spin relaxation in InAs/GaAs quantum dot molecules. Journal of Physics: Condensed Matter, 2015, vol. 27, no 41, p. 415301.Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://iopscience.iop.org/article/10.1088/0953-8984/27/41/415301/pdfVersió
info:eu-repo/semantics/submittedVersionParaules clau / Matèries
Resum
We calculate the spin–orbit induced hole spin relaxation between Zeeman sublevels of vertically stacked InAs quantum dots. The widely used Luttinger–Kohn Hamiltonian, which considers coupling of heavy- and light-holes, ... [+]
We calculate the spin–orbit induced hole spin relaxation between Zeeman sublevels of vertically stacked InAs quantum dots. The widely used Luttinger–Kohn Hamiltonian, which considers coupling of heavy- and light-holes, reveals that hole spin lifetimes (T 1) of molecular states significantly exceed those of single quantum dot states. However, this effect can be overcome when cubic Dresselhaus spin–orbit interaction is strong. Misalignment of the dots along the stacking direction is also found to be an important source of spin relaxation. [-]
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Journal of Physics: Condensed Matter, Volume 27, Number 41Drets d'accés
© 2015 IOP Publishing Ltd
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info:eu-repo/semantics/openAccess
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/openAccess
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