Electron Transport and Recombination in Solid-State Dye Solar Cell with Spiro-OMeTAD as Hole Conductor
Impacte
Scholar |
Altres documents de l'autoria: Fabregat-Santiago, Francisco; Bisquert, Juan; Cevey, Le; Chen, Peter; Wang, Mingkui; Zakeeruddin, Shaik Mohammed; Grätzel, Michael
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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http://dx.doi.org/10.1021/ja805850q |
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Títol
Electron Transport and Recombination in Solid-State Dye Solar Cell with Spiro-OMeTAD as Hole ConductorAutoria
Data de publicació
2009Editor
American Chemical SocietyISSN
0002-7863Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://pubs.acs.org/doi/abs/10.1021/ja805850qVersió
info:eu-repo/semantics/publishedVersionParaules clau / Matèries
Resum
We show that electron transport mechanisms in TiO2 solid-state dye-sensitized solar cells (SDSCs) with spiro-OMeTAD as hole conductor are similar to those of high-performance DSCs with liquid electrolytes and ionic ... [+]
We show that electron transport mechanisms in TiO2 solid-state dye-sensitized solar cells (SDSCs) with spiro-OMeTAD as hole conductor are similar to those of high-performance DSCs with liquid electrolytes and ionic liquids. Impedance spectroscopy provides the parameters for transport and recombination at different conditions of steady state in the dark. The recombination rate is much higher in the solid solar cell, this being a main limiting step to obtain high-efficiency SDSCs. Thus, the expected gain in photovoltage, due to a lower hole Fermi level, is prevented by recombination losses. Under low potentials the transport is limited by the electron transport in the TiO2, but at high potentials spiro-OMeTAD transport resistance reduces the fill factor and hence the efficiency on high-current devices. [-]
Publicat a
Journal of the American Chemical Society, 131, 2, p. 558–562Drets d'accés
Copyright © 2008 American Chemical Society
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