Voltage-Dependent Low-Field Bulk Resistivity in BaTiO3:Zn Ceramics
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Otros documentos de la autoría: Beltrán Mir, Héctor; Prades Tena, Marta; Masó, Nahum; Cordoncillo, Eloisa; West, Anthony R.
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http://dx.doi.org/10.1111/j.1551-2916.2009.03416.x |
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Título
Voltage-Dependent Low-Field Bulk Resistivity in BaTiO3:Zn CeramicsFecha de publicación
2010-02Editor
American Ceramic SocietyISSN
0002-7820Cita bibliográfica
Journal of the American Ceramic Society (2010), 93, 2, p. 500-505Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://onlinelibrary.wiley.com/doi/10.1111/j.1551-2916.2009.03416.x/abstractResumen
Ceramics of composition Ba(Ti1−xZnx)O3−x: 0.00003≤x≤0.01 exhibit modest semiconductivity, whose value is increased by up to two orders of magnitude under the action of a small dc bias voltage. The effect, which is not ... [+]
Ceramics of composition Ba(Ti1−xZnx)O3−x: 0.00003≤x≤0.01 exhibit modest semiconductivity, whose value is increased by up to two orders of magnitude under the action of a small dc bias voltage. The effect, which is not observed in undoped BaTiO3, occurs in both grain and grain boundary regions and is attributed to the nature of the defect structure, which contains highly polarized clusters. It is proposed that internal electron transfer within the clusters under the action of a dc bias voltage leads to a more conductive excited state, which gradually returns to the ground state when the dc bias is removed. [-]
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© 2009 The American Ceramic Society
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