Voltage-Dependent Low-Field Bulk Resistivity in BaTiO3:Zn Ceramics
Impact
Scholar |
Other documents of the author: Beltrán Mir, Héctor; Prades Tena, Marta; Masó, Nahum; Cordoncillo, Eloisa; West, Anthony R.
Metadata
Show full item recordcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7053
comunitat-uji-handle3:10234/8639
comunitat-uji-handle4:
INVESTIGACIONThis resource is restricted
http://dx.doi.org/10.1111/j.1551-2916.2009.03416.x |
Metadata
Title
Voltage-Dependent Low-Field Bulk Resistivity in BaTiO3:Zn CeramicsAuthor (s)
Date
2010-02Publisher
American Ceramic SocietyISSN
0002-7820Bibliographic citation
Journal of the American Ceramic Society (2010), 93, 2, p. 500-505Type
info:eu-repo/semantics/articleAbstract
Ceramics of composition Ba(Ti1−xZnx)O3−x: 0.00003≤x≤0.01 exhibit modest semiconductivity, whose value is increased by up to two orders of magnitude under the action of a small dc bias voltage. The effect, which is not ... [+]
Ceramics of composition Ba(Ti1−xZnx)O3−x: 0.00003≤x≤0.01 exhibit modest semiconductivity, whose value is increased by up to two orders of magnitude under the action of a small dc bias voltage. The effect, which is not observed in undoped BaTiO3, occurs in both grain and grain boundary regions and is attributed to the nature of the defect structure, which contains highly polarized clusters. It is proposed that internal electron transfer within the clusters under the action of a dc bias voltage leads to a more conductive excited state, which gradually returns to the ground state when the dc bias is removed. [-]
Rights
© 2009 The American Ceramic Society
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/closedAccess
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/closedAccess
This item appears in the folowing collection(s)
- QUIO_Articles [689]