Field enhanced bulk conductivity of BaTiO3 : Mg ceramics
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Otros documentos de la autoría: Prades Tena, Marta; Masó, Nahum; Beltrán Mir, Héctor; Cordoncillo, Eloisa; West, Anthony R.
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http://dx.doi.org/10.1039/C0JM00677G |
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Título
Field enhanced bulk conductivity of BaTiO3 : Mg ceramicsFecha de publicación
2010Editor
Royal Society of ChemistryISSN
0959-9428Cita bibliográfica
Journal of Materials Chemistry (2010), 20, p. 5335-5344Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://pubs.rsc.org/en/content/articlelanding/2010/jm/c0jm00677gResumen
The electrical conductivity of ceramics of composition Ba(Ti1−xMgx)O3−x: 0.00003 ≤ x ≤ 0.01 increases with time on application of a small dc bias voltage in the range 1 to 50 V cm−1 and at temperatures in the range ... [+]
The electrical conductivity of ceramics of composition Ba(Ti1−xMgx)O3−x: 0.00003 ≤ x ≤ 0.01 increases with time on application of a small dc bias voltage in the range 1 to 50 V cm−1 and at temperatures in the range 200 to 600 °C. The conductivity increase is reversible on removal of the dc bias. This low field effect is not observed in undoped BaTiO3, is intrinsic, is a property of the bulk material, is independent of atmosphere and electrode material, is not associated with charge injection into the BaTiO3 conduction band and differs from those of both varistors and memristors. The origin of the effect is attributed to a two-level electronic structure in a defect complex that contains Mg located on a Ti site, giving rise to underbonded oxide ions in the vicinity of the defect complex that are readily ionised on application of a dc bias. Conduction is predominantly p-type and therefore, holes located on oxygen, as O− ions, are more mobile than both electrons in Ti 3d levels and oxygen vacancies. [-]
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