Dielectric polarization in axially-symmetric nanostructures: A computational approach
comunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
comunitat-uji-handle4:
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http://dx.doi.org/10.1016/j.cpc.2009.09.005 |
Metadatos
Título
Dielectric polarization in axially-symmetric nanostructures: A computational approachFecha de publicación
2010Editor
ElsevierISSN
104655Cita bibliográfica
Computer Physics Communications, 181, 1, p. 92-98Tipo de documento
info:eu-repo/semantics/articleVersión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
A computational scheme to evaluate exactly the effects of the dielectric mismatch in semiconductor nanostructures with axial symmetry is presented. It is based on the numerical computation of the image charges induced ... [+]
A computational scheme to evaluate exactly the effects of the dielectric mismatch in semiconductor nanostructures with axial symmetry is presented. It is based on the numerical computation of the image charges induced by the carriers at the dielectric interface. Strategies enabling an efficient convergence in the calculation of the self-polarization potential are detailed. Illustrative calculations on exciton and image potential states properties of semiconductor nanorods reveal the need of the developed tool. We show that, contrary to spherical nanostructure geometries, the optical band gap of nanorods is blueshifted as the dielectric constant of the surrounding medium decreases. As for image potential states, we find a strongly anisotropic distribution of the surface electron density, which is a consequence of the variable curvature of the dielectric interface. © 2009 Elsevier B.V. All rights reserved. [-]
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