Role of Zn0 electron-selective layers in regular and inverted bulk heterojunction solar cells
Impacto
Scholar |
Otros documentos de la autoría: Garcia-Belmonte, Germà; Bisquert, Juan; Pérez Boix, Juan; Pacios, Roberto; Etxebarria, Ikerne; Ajuria, Jon
Metadatos
Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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http://dx.doi.org/10.1021/jz200045x |
Metadatos
Título
Role of Zn0 electron-selective layers in regular and inverted bulk heterojunction solar cellsAutoría
Fecha de publicación
2011-02Editor
American Chemical SocietyISSN
1948-7185Cita bibliográfica
Journal of Physical Chemistry Letters (Feb. 2011), vol. 2 , no 5, 407-411Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://pubs.acs.org/doi/abs/10.1021/jz200045x?prevSearch=%255BTitle%253A%2Brole% ...Versión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Here the role of metal oxide (ZnO) electron-selective layers in the operating mechanisms of bulk-heterojunction polymer−fullerene solar cells is addressed. Inverted as well as regular structures containing ZnO layers ... [+]
Here the role of metal oxide (ZnO) electron-selective layers in the operating mechanisms of bulk-heterojunction polymer−fullerene solar cells is addressed. Inverted as well as regular structures containing ZnO layers at the cathode contact have been analyzed using capacitance methods in the dark and impedance spectroscopy under illumination. We systematically observed that the open-circuit voltage Voc at 1 sun illumination results higher for inverted cells than that achieved by regular structures in ΔVoc ≈ 30−50 mV. This shift correlates with the displacement of the flat-band potential Vfb extracted from Mott−Schottky capacitance analysis. A coherent picture is provided that states the hole Fermi level of the polymer highest occupied molecular orbital as an energy reference for both Voc and Vfb. The study connects the position of the hole Fermi level to the p-doping character of the active layer that is influenced by the film morphology through vertical phase segregation. [-]
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© 2011 American Chemical Society
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