Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots
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Títol
Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dotsData de publicació
2011-04-22Editor
American Physical SocietyISSN
1098-0121; 1550-235XCita bibliogràfica
Physical Review B (2011) vol. 83, no. 16Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://link.aps.org/doi/10.1103/PhysRevB.83.165317Versió
info:eu-repo/semantics/publishedVersionParaules clau / Matèries
Resum
We present a comprehensive theoretical investigation of spin relaxation processes of excitons in photoexcited self-assembled quantum dots. The exciton spin relaxations are considered between dark- and bright-exciton ... [+]
We present a comprehensive theoretical investigation of spin relaxation processes of excitons in photoexcited self-assembled quantum dots. The exciton spin relaxations are considered between dark- and bright-exciton states via the channels created by various spin-admixture mechanisms, including electron Rashba and Dresselhaus spin- orbital couplings (SOCs), hole linear and hole cubic SOCs, and electron hyperfine interactions, incorporated with single- and double-phonon processes. The hole-Dresselhaus SOC is identified as the dominant spin-admixture mechanism, leading to relaxation rates as fast as ∼10−2 ns−1, consistent with recent observations. Moreover, due to significant electron-hole exchange interactions, single-phonon processes are unusually dominant over two-phonon ones in a photoexcited dot even at temperatures as high as 15 K. [-]
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