Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-Based Memristors
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Otros documentos de la autoría: Pérez-Martínez, José Carlos; Martín Martín, Diego; Del Pozo, Gonzalo; Arredondo, Belén; Guerrero, Antonio; Romero, Beatriz
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Metadatos
Título
Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-Based MemristorsAutoría
Fecha de publicación
2023-08Editor
Institute of Electrical and Electronics EngineersCita bibliográfica
J. C. Pérez-Martínez, D. Martín-Martín, G. del Pozo, B. Arredondo, A. Guerrero and B. Romero, "Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-Based Memristors," in IEEE Electron Device Letters, vol. 44, no. 8, pp. 1276-1279, Aug. 2023, doi: 10.1109/LED.2023.3288298.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://ieeexplore.ieee.org/abstract/document/10158999Versión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Bias voltage scan rate and mobile ion concentration have a strong influence in J-V curves of metal halide perovskite-based memristors. In addition to hysteresis, in some cases J-V curves also show an anomalous drop ... [+]
Bias voltage scan rate and mobile ion concentration have a strong influence in J-V curves of metal halide perovskite-based memristors. In addition to hysteresis, in some cases J-V curves also show an anomalous drop in current known as negative differential resistance. This feature is usually related to electrochemical reactions between the reactive metal and I− ions, and to air exposure. However, in devices with low-reactive electrodes, its origin is still under debate. In this work, we propose a theoretical model based on ionic-electronic drift-diffusion. This model sheds light into the ionic-electronic processes that shape hysteresis, and it helps to explain the appearance and evolution of a negative resistance in memristors with low-reactive contacts and capacitive hysteresis. Finally, experimental J-V curves are presented to validate the proposed model. [-]
Publicado en
IEEE Electron Device Letters, 2023, vol. 44, no 8Entidad financiadora
Comunidad de Madrid | Universidad Rey Juan Carlos | Ministerio de Ciencia, Innovación y Universidades
Identificador de la entidad financiadora
http://dx.doi.org/10.13039/501100011033
Código del proyecto o subvención
S2018/NMT-4326- SINFOTON2-CM | M2180 | M2363 | M2417 | MICIU/ICTI2017-2020/PID2019-107348GB-100
Título del proyecto o subvención
Perovskitas hibridas estables por control de dimensionalidad e interfaces
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