Disclosing the nature of vacancy defects in α-Ag2WO4
Ver/ Abrir
Impacto
Scholar |
Otros documentos de la autoría: Assis, Marcelo de; Castro, M. S.; Aldao, C. M.; Buono, C.; Ortega, P. P.; Teodoro, M. D.; Andres, Juan; Gouveia, Amanda; Simões, Alexandre; Longo, Elson; Macchi, C. E.; Somoza, Alberto; Moura, F.; Ponce, Miguel Adolfo
Metadatos
Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
comunitat-uji-handle4:
INVESTIGACIONMetadatos
Título
Disclosing the nature of vacancy defects in α-Ag2WO4Autoría
Fecha de publicación
2023-08Editor
ElsevierCita bibliográfica
ASSIS, M., et al. Disclosing the nature of vacancy defects in α-Ag2WO4. Materials Research Bulletin, 2023, vol. 164, p. 112252.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://www.sciencedirect.com/science/article/pii/S0025540823001071Versión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Defects at semiconductors with electron acceptor and donor sites govern the electronic and optoelectronic applications due to their unique electronic properties. This work provides deep insight into the nature of ... [+]
Defects at semiconductors with electron acceptor and donor sites govern the electronic and optoelectronic applications due to their unique electronic properties. This work provides deep insight into the nature of defects
and the conduction mechanism in α-Ag2WO4. To this aim, a detailed analysis of the results of XRD with Rietveld
refinements, FE-SEM images, and measurements of different spectroscopies (impedance, positron annihilation
lifetime, and photoluminescence) are carried out on α-Ag2WO4 samples synthesized by a simple co-precipitation
method. Two types of vacancy defects: cationic O-vacancies, and anionic Ag or Ag–O vacancy complexes are
elucidated with a Schottky p-type potential barrier. The results indicate that the Ag vacancies remain constant
during thermal treatment, while an opposite effect is found for the oxygen vacancies. This behavior governs the
multifunctional properties of α-Ag2WO4 semiconductors via a tunneling plus thermionic conduction mechanism. [-]
Publicado en
Materials Research Bulletin, 164 (2023) 112252Entidad financiadora
Fundação de Amparo à Pesquisa do Estado de São Paulo | Conselho Nacional de Desenvolvimento Científico e Tecnológico – CNPq | Financiadora de Estudos e Projetos – FINEP | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior – CAPES (001) | European Union-Next Generation EU | Universitat Jaume I | Ministerio de Ciencia, Innovación y Universidades
Código del proyecto o subvención
FAPESP (2013/07296-2) | MGS/2021/21 (UP2021-021) | (E-2022-05) | (POSDOC/2019/30) | FAPESP (2019/01732-1) | (project UJI-B2019-30) | (project PGC2018094417-B-I00)
Derechos de acceso
info:eu-repo/semantics/openAccess
Aparece en las colecciones
- QFA_Articles [818]