Electrical Charge Coupling Dominates the Hysteresis Effect of Halide Perovskite Devices
Metadatos
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INVESTIGACIONMetadatos
Título
Electrical Charge Coupling Dominates the Hysteresis Effect of Halide Perovskite DevicesAutoría
Fecha de publicación
2023-01-24Editor
American Chemical SocietyISSN
1932-7447; 1932-7455Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://pubs.acs.org/doi/10.1021/acs.jpclett.2c03812Versión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Hysteresis effects in ionic-electronic devices are a valuable resource for the development of switching memory devices that can be used in information storage and brain-like computation. Halide perovskite devices show ... [+]
Hysteresis effects in ionic-electronic devices are a valuable resource for the development of switching memory devices that can be used in information storage and brain-like computation. Halide perovskite devices show frequent hysteresis in current–voltage curves that can be harnessed to build effective memristors. These phenomena can be often described by a set of highly nonlinear differential equations that involve current, voltage, and internal state variables, in the style of the famous Hodgkin–Huxley model that accounts for the initiation and temporal response of action potentials in biological neurons. Here we extend the neuron-style models that lead to chemical inductors by introducing a capacitive coupling in the slow relaxation variable. The extended model is able to explain naturally previous observations concerning the transition from capacitor to inductor in impedance spectroscopy of MAPbBr solar cells and memristors in the dark. The model also generates new types of oscillating systems by the generation of a truly negative capacitance distinct from the usual inductive effect. [-]
Publicado en
J. Phys. Chem. Lett. 2023, 14, 1014−1021Entidad financiadora
Ministerio de Ciencia e Innovación of Spain (MICINN) | Union NextGenerationEU | Generalitat Valenciana
Código del proyecto o subvención
PRTR-C17.I1
Derechos de acceso
© 2023 American Chemical Society
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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