Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films
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Otros documentos de la autoría: Porcar García, Samuel; González Cuadra, Jaime; Fraga Chiva, Diego; Stoyanova Lyubenova, Teodora; Soraca, Gina; Carda Castelló, Juan Bautista
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Título
Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin FilmsAutoría
Fecha de publicación
2021-11-01Editor
MDPIISSN
2076-3417Cita bibliográfica
Porcar, S.; González, J.; Fraga, D.; Stoyanova Lyubenova, T.; Soraca, G.; Carda, J.B. Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films. Appl. Sci. 2021, 11, 10122. https://doi.org/10.3390/app112110122Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://www.mdpi.com/2076-3417/11/21/10122Versión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
ZnO thin films with oxygen vacancies and doped with Al, Ga, and In (Zn1-xMxO1−y (x = 0.03)) have been successfully deposited on soda-lime glass substrates using a simple soft chemical method. The crystalline structure ... [+]
ZnO thin films with oxygen vacancies and doped with Al, Ga, and In (Zn1-xMxO1−y (x = 0.03)) have been successfully deposited on soda-lime glass substrates using a simple soft chemical method. The crystalline structure shows a single hexagonal phase of wurtzite with preferred crystal growth along the 002 plane. The surface morphology, characterized by SEM, revealed that the grain shape varies depending on the dopant agent used. Optical measurements displayed an increase in the bandgap values for doped films from 3.29 for ZnO to 3.35, 3.32, and 3.36 for Al, Ga, and In doped films, respectively, and an average transmittance superior to 90% in some cases (in the range between 400 and 800 nm). The electrical response of the films was evaluated with a four-point probe being 229.69, 385.71, and 146.94 Ω/sq for aluminium, gallium, and indium doped films, respectively. [-]
Publicado en
Applied Sciences, 2021, vol. 11, no 21Entidad financiadora
Ministerio de Economía y Competitividad (España)
Proyecto de investigación
ENE2017-87671-C3-3-RPID2020-116719RB-C43
Derechos de acceso
info:eu-repo/semantics/openAccess
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