Ligand & band gap engineering: tailoring the protocol synthesis for achieving high-quality CsPbI3 quantum dots
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Otros documentos de la autoría: Hassanabadi, Ehsan; Latifi, Masoud; Gualdrón Reyes, Andrés Fabián; Masi, Sofia; YOON, SEOG JOON; Poyatos, Macarena; Julian-Lopez, Beatriz; Mora-Sero, Ivan
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Título
Ligand & band gap engineering: tailoring the protocol synthesis for achieving high-quality CsPbI3 quantum dotsAutoría
Fecha de publicación
2020Editor
Royal Society of ChemistryISSN
2040-3364; 2040-3372Cita bibliográfica
HASSANABADI, Ehsan, et al. Ligand & Band Gap Engineering: Tailoring the Protocol Synthesis for Achieving High-Quality CsPbI3 Quantum Dots. Nanoscale, 2020.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://pubs.rsc.org/en/content/articlelanding/2020/nr/d0nr03180a#!divAbstractVersión
info:eu-repo/semantics/submittedVersionResumen
Hot-injection has become the most widespread method used for the synthesis of perovskite quantum
dots (QDs) with enormous interest for application in optoelectronic devices. However, there are some
aspects of the ... [+]
Hot-injection has become the most widespread method used for the synthesis of perovskite quantum
dots (QDs) with enormous interest for application in optoelectronic devices. However, there are some
aspects of the chemistry involved in this synthesis that have not been completely investigated. In this
work, we synthesized ultra-high stable CsPbI3 QDs for more than 15 months by controlling two main
parameters: synthesis temperature and the concentration of capping ligands. By increasing the capping
ligand concentration during the QD synthesis, we were able to grow CsPbI3 in a broad range of temperatures, improving the photophysical properties of QDs by increasing the synthesis temperature. We
achieved the maximum photoluminescence quantum yield (PLQY) of 93% for a synthesis conducted at
185 °C, establishing an efficient surface passivation to decrease the density of non-radiative recombination sites. Under these optimized synthesis conditions, deep red LEDs with an External Quantum
Efficiency (EQE) higher than 6% were achieved. The performance of these LEDs is higher than that of the
reported CsPbI3 QD-LEDs containing standard capping agents, without additional elements or further
element exchange. We show that it is possible to produce stable CsPbI3 QDs with high PLQY and red
emission beyond the requirement of the Rec. 2020 standards for red color. [-]
Publicado en
Nanoscale, 2020Proyecto de investigación
(724424-No-LIMIT, TEC2017-85912-C2-2, Prometeo/2018/ 098,Derechos de acceso
http://rightsstatements.org/vocab/CNE/1.0/
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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