Superior Performance of V2O5 as Hole Selective Contact over other Transition Metal Oxides in Silicon Heterojunction Solar Cells
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Other documents of the author: Almora Rodríguez, Osbel; Gerling, Luis Guillermo; Voz Sanchez, Cristobal; Alcubilla, Ramon; Puigdollers, Joaquim; Garcia-Belmonte, Germà
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comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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Title
Superior Performance of V2O5 as Hole Selective Contact over other Transition Metal Oxides in Silicon Heterojunction Solar CellsAuthor (s)
Date
2017Publisher
ElsevierISSN
0927-0248; 1879-3398Bibliographic citation
Almora, O., Gerling, L. G., Voz, C., Alcubilla, R., Puigdollers, J., & Garcia-Belmonte, G. (2017). Superior performance of V 2 O 5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells. Solar Energy Materials and Solar Cells, 168, 221-226.Type
info:eu-repo/semantics/articlePublisher version
https://www.sciencedirect.com/science/article/pii/S0927024817302118Version
info:eu-repo/semantics/submittedVersionSubject
Abstract
Transition metal oxides (TMOs) have recently been proved to efficiently serve as
hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the
present work, two TMO/c-Si heterojunctions ... [+]
Transition metal oxides (TMOs) have recently been proved to efficiently serve as
hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the
present work, two TMO/c-Si heterojunctions are explored using MoO3 (reference) and
V2O5 as an alternative candidate. It has been found that V2O5 devices present larger
(16% improvement) power conversion efficiency mainly due to their higher open-circuit
voltage. While V2O5/c-Si devices with textured front surfaces exhibit larger short-circuit
currents, it is also observed that flat solar cell architectures allow for passivation of the
V2O5/n-Si interface, giving significant carrier lifetimes of 200 ms (equivalent to a
surface recombination velocity of Seff ~140 cm s-1) as derived from impedance analysis.
As a consequence, a significant open-circuit voltage of 662 mV is achieved. It is found
that, at the TMO/c-Si contact, a TMO work function enhancement ΔΦTMO occurs during
the heterojunction formation with its consequent dipole layer enlargement
Δ’=Δ+ΔΦTMO. Our results provide new insights into the TMO/c-Si contact energetics,
carrier transport across the interface and surface recombination allowing for further
understanding of the nature of TMO/c-Si heterojunctions. [-]
Is part of
Solar Energy Materials and Solar Cells, 2017, vol. 168, p. 221-226.Investigation project
We thank financial support by Ministerio de Economía y Competitividad (MINECO) of Spain under projects MAT2016-76892-C3-1-R, ENE2013-48629-C4-1-R and ENE2014-56237-C4-1-R, and also from Generalitat Valenciana (Prometeo/2014/020). O. A. acknowledges Generalitat Valenciana for a grant (GRISOLIAP2014/035). L. G. G. acknowledges Mexico’s grant program CONACyT for a grant.Rights
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info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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