Near-complete suppression of surface losses and total internal quantum efficiency in BiVO4 photoanodes
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Otros documentos de la autoría: Trzesniewski, Bartek J.; Digdaya, Ibadillah; Nagaki, Tetsuro; Ravishankar, Sandheep; Herraiz Cardona, Isaac; Vermaas, David; Longo, Alessandro; Gimenez, Sixto; Smith, Wilson A.
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Near-complete suppression of surface losses and total internal quantum efficiency in BiVO4 photoanodesAutoría
Fecha de publicación
2017-05-26Editor
Royal Society of ChemistryCita bibliográfica
TRZESNIASKI, Bartek J.; DIGDAYA, Ibadillah; NAGAKI, Tetsuro; RAVISHANKAR, Sandheep; HERRAIZ CARDONA, Isaac; VERMAAS, David; LONGO, Alessandro; GIMENEZ, Sixto; SMITH, Wilson A. Near-complete suppression of surface losses and total internal quantum efficiency in BiVO4 photoanodes. Energy & Environmental Science (2017), v. 10, pp. 1517-529Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://pubs.rsc.org/en/content/articlelanding/2017/ee/c6ee03677e#!divAbstractVersión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Bismuth vanadate (BiVO4) is one of the most efficient light absorbing metal oxides for solar water
splitting. BiVO4 photoanodes immersed in an electrolyte in an open circuit configuration and exposed to
simulated ... [+]
Bismuth vanadate (BiVO4) is one of the most efficient light absorbing metal oxides for solar water
splitting. BiVO4 photoanodes immersed in an electrolyte in an open circuit configuration and exposed to
simulated solar illumination for prolonged time achieve superior photoelectrochemical (PEC) activity.
This photocharging (PC) effect is capable of almost completely overcoming the surface and bulk
limitations of BiVO4. Herein we show that alkaline conditions favor the PC effect; specifically BiVO4
photoanodes subjected to PC treatment at pH 10 achieve a record high photocurrent for undoped and
uncatalyzed BiVO4 of 4.3 mA cm 2 @ 1.23 VRHE, an outstandingly low onset potential of 0.25 VRHE, and a
very steep photocurrent onset. Alkaline conditions also facilitate excellent external and internal quantum
efficiencies of 75 and 95% respectively (average in the 440 nm 4 l 4 330 nm range). Moreover,
impedance spectroscopy and in situ XAS study suggest that electronic, structural and chemical
properties of the bulk of these films remain unchanged during the PC treatment. However, appreciable
changes in the surface-related properties take place. Ultimately, our results indicate that the improved
activity of PC-BiVO4 is enhanced by surface reaction pathways of the semiconductor–liquid junction,
which is directly correlated with the electrochemical environment in which it is modified. [-]
Publicado en
Energy & Environmental Science (2017), issue 10Proyecto de investigación
1) Foundation for Fundamental Research on Matter (FOM TNW 10.327); 2) University Jaume I through the project P1-1B2011-50.Derechos de acceso
info:eu-repo/semantics/openAccess
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